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IEC 60747-9 Ed. 3.0 b:2019

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

standard by International Electrotechnical Commission , 11/13/2019

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Full Description

IEC 60747-9 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). The major changes with respect to the previous edition are mainly of an editorial nature.
 

Product Details

Edition:
3.0
Published:
11/13/2019
Number of Pages:
160
File Size:
1 file , 4 MB
Note:
This product is unavailable in Ukraine, Russia, Belarus, Canada
 

Document History

  1. IEC 60747-9 Ed. 3.0 b:2019

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    Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

    • Most Recent

  2. IEC 60747-9 Ed. 2.0 b:2007


    Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)

    • Historical Version

  3. IEC 60747-9 Ed. 1.1 b:2001


    Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs) CONSOLIDATED EDITION

    • Historical Version