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BS IEC 63068-2:2019

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Test method for defects using optical inspection

standard by British Standard / International Electrotechnical Commission , 02/08/2019

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About This Item

 

Full Description

BS IEC 63068-2:2019 provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers.

Cross References:
ISO 24173


All current amendments available at time of purchase are included with the purchase of this document.
 

Product Details

Published:
02/08/2019
ISBN(s):
9780580513749
Number of Pages:
28
File Size:
1 file , 2.7 MB
Product Code(s):
30366380, 30366380, 30366380