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BS IEC 60747-8:2010+A1:2021

Semiconductor devices. Discrete devices-Field-effect transistors

standard by British Standard / International Electrotechnical Commission , 07/09/2021

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About This Item

 

Full Description

This part of IEC 60747 gives standards for the following categories of field-effect transistors:

– type A: junction-gate type;
– type B: insulated-gate depletion (normally on) type;
– type C: insulated-gate enhancement (normally off) type.

Incorporates the following:
BS IEC 60747-8:2010
 

Product Details

Published:
07/09/2021
ISBN(s):
9780539035803
Number of Pages:
88
File Size:
1 file , 1.5 MB
Product Code(s):
30389767, 30389767, 30389767
 

Document History

  1. BS IEC 60747-8:2010+A1:2021

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    Semiconductor devices. Discrete devices-Field-effect transistors

    • Most Recent

  2. BS IEC 60747-8:2010


    Semiconductor devices. Discrete devices-Field-effect transistors

    • Historical Version

  3. BS IEC 60747-8-4:2004


    Discrete semiconductor devices-Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications

    • Historical Version

  4. BS IEC 60747-8:2000


    Discrete semiconductor devices and integrated circuits-Field-effect transistors-Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors.

    • Historical Version

  5. BS 6493-1.8:1985


    Semiconductor devices. Discrete devices-Recommendations for field-effect transistors

    • Historical Version