1.1 These test methods cover two procedures for measuring the resistivity and Hall coefficient of single-crystal semiconductor specimens. These test methods differ most substantially in their test specimen requirements.

1.2 These test methods do not provide procedures for shaping, cleaning, or contacting specimens; however, a procedure for verifying contact quality is given.

1.3 The method in Practice F418 does not provide an interpretation of the results in terms of basic semiconductor properties (for example, majority and minority carrier mobilities and densities). Some general guidance, applicable to certain semiconductors and temperature ranges, is provided in the Appendix. For the most part, however, the interpretation is left to the user.

1.4 Interlaboratory tests of  these test methods (Section 19) have been conducted only over a limited range of resistivities and for the semiconductors, germanium, silicon, and gallium arsenide. However, the method is applicable to other semiconductors provided suitable specimen preparation and contacting procedures are known. The resistivity range over which the method is applicable is limited by the test specimen geometry and instrumentation sensitivity.

1.5 The values stated in acceptable metric units are to be regarded as the standard. The values given in parentheses are for information only. (See also 3.1.4.)

1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

1.7 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.