Hello. Sign In
Standards Store

ASTM F1188

2002 Edition, December 10, 2002

Complete Document

Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption with Short Baseline



View Abstract
Product Details
Document History

Detail Summary

Not Active, See comments below

EN
Additional Comments:
W/D 2003 NO S/S
Format
Details
Price (USD)
PDF
Single User
$63.00
Print
In Stock
$63.00
Add to Cart

Product Details:

  • Revision: 2002 Edition, December 10, 2002
  • Published Date: December 10, 2002
  • Status: Not Active, See comments below
  • Document Language: English
  • Published By: ASTM International (ASTM)
  • Page Count: 9
  • ANSI Approved: No
  • DoD Adopted: No

Description / Abstract:

This test method covers the determination of the interstitial oxygen content of single crystal silicon by measurement of an infrared absorption band at room temperature. This test method requires the use of an oxygen-free reference specimen. It is recommended that a reference material, such as NIST SRM 2551, another certified reference material for oxygen content of silicon, or reference materials traceable to the CRMs, be used to calibrate the spectrophotometer in order to reduce bias.

This test method requires the use of a computerized spectrophotometer, preferably an FT-IR spectrophotometer. This method is incorporated into many modern FT-IR instruments.

The useful range of oxygen concentration measurable by this test method is from 1 × 10 16 atoms/cm³ to the maximum amount of interstitial oxygen soluble in silicon.

If the spectrophotometer is calibrated using 2-mm thick double-side polished CRMs, this test method is suitable for use only with 2-mm thick, double-side polished test specimens. It can be extended to the measurement of test specimens polished on one or both sides with thickness in the range 0.4 to 4 mm with the use of working reference materials traceable to the CRMs.

The oxygen concentration obtained using this test method assumes a linear relationship between the interstitial oxygen concentration and the absorption coefficient of the 1107 cm⊃−1; band associated with interstitial oxygen in silicon.

This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.