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ASTM F1630

December 10, 2000

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Standard Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities

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Product Details:

  • Revision: December 10, 2000
  • Published Date: December 10, 2000
  • Status: Not Active, See comments below
  • Document Language: English
  • Published By: ASTM International (ASTM)
  • Page Count: 6
  • ANSI Approved: No
  • DoD Adopted: No

Description / Abstract:

1. Scope

1.1 This test method covers the determination of electrically active boron, phosphorus, arsenic, aluminum, antimony, and gallium concentration in single crystal silicon.

1.2 This test method can be used for silicon in which the impurity/dopant concentrations are between 0.01 ppba and 5.0 ppba for each of the electrically active elements.

1.3 The concentration for each impurity/dopant can be obtained by application of Beer's Law. Calibration factors are given for each element.

1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.