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2002 Edition, December 10, 2002

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Standard Test Method for Resistivity of Silicon Bars Using a Two-Point Probe

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Product Details:

  • Revision: 2002 Edition, December 10, 2002
  • Published Date: December 10, 2002
  • Status: Not Active, See comments below
  • Document Language: English
  • Published By: ASTM International (ASTM)
  • Page Count: 11
  • ANSI Approved: No
  • DoD Adopted: No

Description / Abstract:

This test method covers the measurement of the resistivity of single-crystal bars having cross sections that are uniform in area and square, rectangular or round in shape, and having resistivity between 0.0009 and 3000 Ω·cm. The resistivity of a silicon crystal is an important acceptance requirement.

This test method is intended for use on single crystals of silicon of either n- or p-type for which the uniformity of the crystal cross section is such that the area can be accurately calculated. The specimen cross-sectional area shall be constant to within ±1 % of the average area as determined by measurements along the crystal axis (see 12.2).

The ratio of the length to the maximum dimension of the cross section of the specimen shall not be less than 3:1 (see 12.1). The largest diameter tested by round robin was 3.75 cm (1.5 in.), and this is the largest diameter that can be measured by this method. The specimen shall normally have a surface finish of 0.4 µm (16 µin.) rms or less (see ANSI B46). Other surface finishes may be used if mutually acceptable; however, the multilaboratory precision figures of this test (see 16.1) then may no longer apply.

This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 9.