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1990 Edition, January 1, 1990

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Standard Practice for Preparing Silicon Single Crystal by the Float-Zone Technique for Evaluation of Polysilicon Ingot

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Superseded By: ASTM F1723

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Product Details:

  • Revision: 1990 Edition, January 1, 1990
  • Published Date: September 28, 1990
  • Status: Superseded By:
  • Superseded By: ASTM F1723
  • Document Language: English
  • Published By: ASTM International (ASTM)
  • Page Count: 2
  • ANSI Approved: No
  • DoD Adopted: No

Description / Abstract:

1. Scope

1.1 This practice covers a procedure for growing single crystals of silicon by the float-zone technique from a 19-mm diameter rod of polysilicon under controlled standardized conditions.

1.2 The crystals are intended to be characterized by various measurements for the purpose of evaluating the raw polycrystalline silicon ingot by Test Method F 574.

1.3 This practice is not the only possible set of conditions, procedures, and equipment that can be used to prepare a single crystal sample for evaluation of a polysilicon ingot. The user should verify that any modifications made to the procedure are equivalent.

1.4 This standard does not purport to address all of the safety problems associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific precautionary statements are given in Section 5.