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1994 Edition, July 15, 1994

Complete Document

Standard Test Method for Detection of Oxidation Induced Defects in Polished Silicon Wafers

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Superseded By: ASTM F1727

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Product Details:

  • Revision: 1994 Edition, July 15, 1994
  • Published Date: July 15, 1994
  • Status: Superseded By:
  • Superseded By: ASTM F1727
  • Document Language: English
  • Published By: ASTM International (ASTM)
  • Page Count: 11
  • ANSI Approved: No
  • DoD Adopted: No

Description / Abstract:

1. Scope

1.1 This test method covers detection of crystalline defects in the surface region of silicon wafers which are induced or enhanced by oxidation cycles encountered in device processing. Atmospheric pressure oxidation cycles representative of bipolar, MOS, and CMOS technologies are included. The procedures of the test method reveal strain fields which arise from the presence of precipitates, oxidation induced or pre-existing stacking faults, dislocations, and shallow etch pits which may or may not occur in a swirl-like pattern. In addition, they also reveal striations arising from variations in dopants or other impurities and slip arising from internal stress in the wafer or from edge stresses induced by impact damage or wafer supports.

NOTE 1--Many of the defects revealed by this test method are also revealed by the procedures of Test Method F 47. The latter test method is customarily used to detect dislocations, slip, lineage, grain boundaries, and other crystalline defects in unprocessed silicon slices or wafers.

1.2 Application of the test method is limited to specimens that have been chemical or chemical/mechanical polished to remove surface damage from at least one side of the specimen. In principle, the procedures of this test method may be applied to detection of defects in epitaxial layers; however, care must be taken not to etch through the layer or region of interest.

1.3 The side of the specimen opposite the surface to be investigated may be damaged deliberately or otherwise treated for gettering purposes or chemically etched to remove damage.

NOTE 2--Otherwise identical wafers with different back surface conditions may yield different results by this test method.

1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 9.