Hello. Sign In
Standards Store


1994 Edition, August 15, 1994

Complete Document

Standard Test Method for Determining Carrier Density in Silicon Epitaxial Layers by Capacitance-Voltage Measurements on Fabricated Junction or Schottky Diodes

View Abstract
Product Details
Document History

Detail Summary

Not Active, See comments below

Additional Comments:
Price (USD)
Single User
In Stock
PDF + Print
In Stock
$120.70 You save 15%
Add to Cart

Product Details:

  • Revision: 1994 Edition, August 15, 1994
  • Published Date: August 15, 1994
  • Status: Not Active, See comments below
  • Document Language: English
  • Published By: ASTM International (ASTM)
  • Page Count: 12
  • ANSI Approved: No
  • DoD Adopted: No

Description / Abstract:

1. Scope

1.1 This test method covers the measurement of carrier density in silicon epitaxial layers. The precision that can be expected depends upon the carrier-density inhomogeneities parallel and perpendicular to the junction and upon the carrier-density level.

1.2 The measurement requires the formation of Schottky or p-n junction diodes on or in the epitaxial layer. In this sense the method is destructive (see, however, 5.2).

1.3 Both n- and p-type epitaxial layers can be evaluated, on substrates of the same or opposite types, if the layer thickness is greater than twice the zero-bias depletion width plus, for diffused diodes only, the junction depth (1). This test method is also applicable to bulk material.

1.4 This test method covers the carrier density range from about 4 × 1013 to about 8 × 1016 carriers/cm3 (resistivity range from about 0.1 to about 100 Ω.cm in n-type wafers and from about 0.24 to about 330 Ω.cm in p-type wafers).

1.5 This test method includes procedures for checking both capacitance- and voltage-measuring equipment.

1.6 This test method provides two means of calculating the carrier density from capacitance-voltage data: an incremental method (12.3.1) and a curve-fitting method (12.3.2).

NOTE 1--An alternative method for determining carrier density in epitaxial layers is given in Test Method F 1392. This and a related method, DIN 50 439, use a mercury-probe Schottky barrier contact rather than a fabricated p-n junction or Schottky diode. Therefore, measurements by Test Method F 1392 and DIN 50 439 may not be entirely comparable to those made by this test method. DIN 50 439 is also applicable to gallium arsenide as well as to silicon.

1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in 11.8 and 11.14.