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ASTM F76

2008 Edition, June 15, 2008

Complete Document

Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors

Includes all amendments and changes through Reapproval Notice , 2016


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Product Details:

  • Revision: 2008 Edition, June 15, 2008
  • Published Date: January 2016
  • Status: Active, Most Current
  • Document Language: English
  • Published By: ASTM International (ASTM)
  • Page Count: 14
  • ANSI Approved: No
  • DoD Adopted: No

Description / Abstract:

These test methods cover two procedures for measuring the resistivity and Hall coefficient of single-crystal semiconductor specimens. These test methods differ most substantially in their test specimen requirements.

Test Method A, van der Pauw (1) 2—This test method requires a singly connected test specimen (without any isolated holes), homogeneous in thickness, but of arbitrary shape. The contacts must be sufficiently small and located at the periphery of the specimen. The measurement is most easily interpreted for an isotropic semiconductor whose conduction is dominated by a single type of carrier.

Test Method B, Parallelepiped or Bridge-Type—This test method requires a specimen homogeneous in thickness and of specified shape. Contact requirements are specified for both the parallelepiped and bridge geometries. These test specimen geometries are desirable for anisotropic semiconductors for which the measured parameters depend on the direction of current flow. The test method is also most easily interpreted when conduction is dominated by a single type of carrier.

These test methods do not provide procedures for shaping, cleaning, or contacting specimens; however, a procedure for verifying contact quality is given.

NOTE 1—Practice F418 covers the preparation of gallium arsenide phosphide specimens.

The method in Practice F418 does not provide an interpretation of the results in terms of basic semiconductor properties (for example, majority and minority carrier mobilities and densities). Some general guidance, applicable to certain semiconductors and temperature ranges, is provided in the Appendix. For the most part, however, the interpretation is left to the user.