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ASTM F769

June 10, 2000

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Standard Test Method for Measuring Transistor and Diode Leakage Currents



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Product Details:

  • Revision: June 10, 2000
  • Published Date: June 10, 2000
  • Status: Not Active, See comments below
  • Document Language: English
  • Published By: ASTM International (ASTM)
  • Page Count: 3
  • ANSI Approved: No
  • DoD Adopted: No

Description / Abstract:



1. Scope

1.1 This test method covers the measurement of leakage currents of transistors and diodes. Electronic devices exposed to ionizing radiation may show increases in leakage current as the accumlated total dose rises.

1.2 These procedures are intended for the measurement of currents in the range from 10−11 to 10−3 A.

1.3 This test method may be used with either a virtual-ground current meter or a resistance-shunt current meter.

1.4 The values stated in Internationl System of Units (SI) are to be regarded as standard. No other units of measurement are included in this test method.

1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.