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1989 Edition, August 25, 1989

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Standard Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer

Includes all amendments and changes through Reapproval Notice

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Product Details:

  • Revision: 1989 Edition, August 25, 1989
  • Published Date: January 2000
  • Status: Not Active, See comments below
  • Document Language: English
  • Published By: ASTM International (ASTM)
  • Page Count: 7
  • ANSI Approved: No
  • DoD Adopted: No

Description / Abstract:

1. Scope

1.1 This test method provides a technique for the measurement of the thickness of epitaxial layers of silicon deposited on silicon substrates. A dispersive infrared spectrophotometer is used. For this measurement, the resistivity of the substrate must be less than 0.02 Ω·cm at 23°C and the resistivity of the layer must be greater than 0.1 Ω·cm at 23°C.

1.2 This technique is capable of measuring the thickness of both n- and p-type layers greater than 2 μm thick. With reduced precision, the technique may also be applied to both n- and p-type layers from 0.5 to 2 μm thick.

1.3 This test method is suitable for referee measurements.

1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.