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2002 Edition, January 10, 2002

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Standard Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers

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W/D 2003 NO S/S
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Product Details:

  • Revision: 2002 Edition, January 10, 2002
  • Published Date: January 10, 2002
  • Status: Not Active, See comments below
  • Document Language: English
  • Published By: ASTM International (ASTM)
  • Page Count: 5
  • ANSI Approved: No
  • DoD Adopted: No

Description / Abstract:

This test method covers test site selection and data reduction procedures for radial variation of the interstitial oxygen concentration in silicon slices typically used in the manufacture of microelectronic semiconductor devices.

This test method is intended as both a referee and production test through selection of an appropriate test position plan.

The interstitial oxygen content may be measured in accordance with Test Methods F 1188 or F 1619, DIN 50438/1, JEIDA 61, or any other procedure agreed upon by the parties to the test.

Acceptable thickness and surface finish for the test specimens are specified in the applicable test methods. This test method is suitable for use on chemically etched, single-side polished and double-side polished silicon wafers or slices with no surface defects that could adversely change infrared radiation transmission through the test specimen (subsequently called slice), provided that appropriate test methods for oxygen content are selected.

This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.