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ASTM F980M

1996 Edition, June 10, 1996

Complete Document

Standard Guide for the Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices (Metric)

Includes all amendments and changes through Reapproval Notice , 2003


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Superseded By: ASTM F980

EN
Additional Comments:
W/D S/S BY ASTM F980
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Product Details:

  • Revision: 1996 Edition, June 10, 1996
  • Published Date: January 2003
  • Status: Superseded By:
  • Superseded By: ASTM F980
  • Document Language: English
  • Published By: ASTM International (ASTM)
  • Page Count: 5
  • ANSI Approved: No
  • DoD Adopted: No

Description / Abstract:

This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies.

This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to consult and establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.