2011 Edition, January 1, 2011
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics
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Description / Abstract:
This test method covers the use of the subthreshold charge
separation technique for analysis of ionizing radiation degradation
of a gate dielectric in a metal-oxide-semiconducter-field-effect
transistor (MOSFET) and an isolation dielectic in a parasitic
MOSFET.2,3,4The subthreshold technique is used to
separate the ionizing radiation-induced inversion voltage shift,
ΔV INV into voltage shifts due to
oxide trapped charge,Δ V ot and interface
traps,Δ V it. This technique uses the pre- and
post-irradiation drain to source current versus gate voltage
characteristics in the MOSFET subthreshold region.