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IEEE N42.31

2003 Edition, February 20, 2003

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Measurement Procedures for Resolution and Efficiency of Wide-Bandgap Semiconductor Detectors of Ionizing Radiation

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Standard measurement and test procedures are established for wide-bandgap semiconductor detectors such as cadmium telluride (CdTe), cadmium-zinc-telluride (CdZnTe), and mercuric iodide (HgI2) that can be used at room temperature for the detection and quantitative characterization of gamma-rays, X-rays, and charged particles. Standard terminology and descriptions of the principal features of the detectors are included. Included in this standard is an annex on interfering electromagnetic noise, which is a factor in such measurements.

The purpose of this standard is to establish terminology and test procedures that have the same meaning to both manufacturers and users. Not all tests described in this standard are mandatory, but those used to specify performance shall be made in accordance with the procedures described herein. (Use of the word “shall” indicates a mandatory requirement, “must” a physical one, and “should” means “recommended.”)


This standard applies to wide-bandgap semiconductor radiation detectors, such as cadmium telluride (CdTe), cadmium-zinc-telluride (CdZnTe, referred to herein as CZT), and mercuric iodide (HgI2) used in the detection and measurement of ionizing radiation at room temperature; gamma rays, X-rays, and charged particles are covered. The measurement procedures described herein apply primarily to detector elements having planar, hemispherical, or other geometries in which charge carriers of both polarities contribute to the output signal. When the devices are an integral part of a system, it may not be possible for a user to make tests on the detector alone. In this instance, tests on the detector element must be established by mutual agreement between the manufacturer and the user.