Hello. Sign In
Standards Store
Look Inside

JEDEC JESD 60

Revision A, September 1, 2004

Complete Document

A Procedure for Measuring P-Channel MOSFET Hot-Carrier- Induced Degradation Under DC Stress



View Abstract
Product Details
Document History

Detail Summary

Active, Most Current

EN
Format
Details
Price (USD)
PDF
Single User
$67.00
Print
In Stock
$67.00
PDF + Print
In Stock
$93.80 You save 30%
Add to Cart

Product Details:


Description / Abstract:

This method establishes a standard procedure for accelerated testing of the hot-carrier-induced change of a p-channel MOSFET. The objective is to provide a minimum set of measurements so that accurate comparisons can be made between different technologies. The measurements specified should be viewed as a starting pint in the characterization and benchmarking of the trasistor manufacturing process.