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About This Item

 

Full Description

This specification covers the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, titanium-tungsten (TiW), or zapped vertical emitter (ZVE) as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4).
 

Document History

  1. MIL MIL-M-38510/208F

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    Microcircuit, Digital, 4096-Bit Schottky, Bipolar, Programmable Read-Only Memory (PROM), Monolithic Silicon

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  2. MIL MIL-M-38510/208E


    Microcircuit, Digital, 4096-Bit Schottky, Bipolar, Programmable Read-Only Memory (PROM), Monolithic Silicon

    • Historical Version
  3. MIL MIL-M-38510/208D


    MICROCIRCUIT, DIGITAL, 4096-BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON (SEE BASE FOR INACTIVATION NOTICE)(SUPERSEDING MIL-M-38510/208C)

    • Historical Version
  4. MIL MIL-M-38510/208C


    MICROCIRCUITS, DIGITAL, 4096-BIT SCHOTTKY BIPOLAR PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/208B)(S/S BY MIL-M-38510/208D)

    • Historical Version