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MIL-M-38510/261 1989 Edition, March 22, 1989
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MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 32K X 8 BIT, ELECTRICALLY ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EEPROM), MONOLITHIC SILICON
Includes all amendments and changes through Validation Notice 4, November 30, 2010
Additional Comments: INACTIVE FOR NEW DESIGN
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This specification covers the detail requirements for monolithic silicon, CMOS, 32K words/8-bit, 5.0-volt, electrically erasable programmable read-only memory microcircuits. Two product assurance classes (B and S), a choice of lead finish and three package types are provided for each device and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510.

The device types shall be as shown in the following:
Device      Circuit        Access     Write      Write                   Software
 type     organization      time      speed       mode      Endurance  data protect

  01     32K words/8-bit   350 ns     10 ms    Byte/page    10,000 cy       No
  02     32K words/8-bit   300 ns     10 ms    Byte/page    10,000 cy       No
  03     32K words/8-bit   250 ns     10 ms    Byte/page    10,000 cy       No
  04     32K words/8-bit   200 ns     10 ms    Byte/page    10,000 cy       No
  05     32K words/8-bit   150 ns     10 ms    Byte/page    10,000 cy       No
  06     32K words/8-bit   250 ns     10 ms    Byte/page    100,000 cy      No
  07     32K words/8-bit   350 ns     10 ms    Byte/page    10,000 cy       Yes
  08     32K words/8-bit   300 ns     10 ms    Byte/page    10,000 cy       Yes
  09     32K words/8-bit   250 ns     10 ms    Byte/page    10,000 cy       Yes
  10     32K words/8-bit   200 ns     10 ms    Byte/page    10,000 cy       Yes
  11     32K words/8-bit   150 ns     10 ms    Byte/page    10,000 cy       Yes
  12     32K words/8-bit   250 ns     10 ms    Byte/page    100,000 cy      Yes




The device class shall be the product assurance level as defined in MIL-M-38510.

The case outlines shall be designated in appendix C of MIL-M-38510, and as follows:
Outline letter                           Case outline

      U           Figure 1 (28-lead, .660" × .560" × .100"), pin grid array
      X           D-10 (28-lead, 1.490" × .610" × .232"), dual-in-line package
      Y           C-12 (32-terminal, .560" × .458" × .120"), rectangular chip
                  carrier package
      Z           F-12 (28-lead, .740" × .420" × .130"), flat package


Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center, RBE-2, Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

  All input and output voltages (including VCC)  1/- -   −0.5 V dc to +6.0 V dc
  Voltage for chip clear (Vh)- - - - - - - - - - - - -   +15.0 V dc
  Operating case temperature range - - - - - - - - - -   −55°C to +125°C
  Storage temperature range- - - - - - - - - - - - - -   −65°C to +150°C
  Lead temperature (soldering, 10 seconds) - - - - - -   +300°C
  Thermal resistance, junction-to-case (θJC) - - - - -   See MIL-M-38510,
                                                         appendix C
  Maximum power dissipation (PD)  2/ - - - - - - - - -   1.0 W
  Junction temperature (TJ)  3/- - - - - - - - - - - -   +175°C
  Endurance:
    Device types 01-05 and 07-11 - - - - - - - - - - -   10,000 cycles/byte,
                                                         minimum
    Device types 06 and 12 - - - - - - - - - - - - - -   100,000 cycles/byte,
                                                         minimum
  Data retention - - - - - - - - - - - - - - - - - - -   10 years, minimum




  Supply voltage range (VCC)  - - - - - - - - - - - - -  +4.5 V dc to +5.5 V dc
  Case operating temperature range (TC) - - - - - - - -  −55°C to +125°C
  Input voltage, low range (VIL)  - - - - - - - - - - -  −0.1 V dc to +0.8 V dc
  Input voltage, high range (VIH) - - - - - - - - - - -  +2.0 V dc to VCC+0.3
                                                         V dc
  High level chip erase voltage (Vh)  - - - - - - - - -  12 V dc to 13 V dc