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MIL-PRF-19500/638 Revision B, May 7, 2004
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SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPE 2N7410, JANSD AND JANSR
Includes all amendments and changes through Validation Notice 2, May 24, 2016
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This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event characterization), power transistor. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.