MIL-S-19500-542 Revision E, August 17, 1994
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for N-channel, enhancement-mode, MOSFET, power transistors intended for use in high density power switching applications. Three levels of product assurance are provided for each device type as specified in MIL-S-19500. Two levels of product assurance are provided for each unencapsulated device type. See 6.4 for JAN level.
See figure 1 (TO-204AA; formerly TO-3), figures 2, 3, and (see 6.5) for JANHC and JANKC die dimensions.
Unless otherwise specified, TA = +25°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Electronics Supply Center, ATTN: DESC-ELD, 1507 Wilmington Pike, Dayton, OH 45444-5765, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Unless otherwise specified, TC = +25°C.