MIL-S-19500/297 Revision B, March 30, 1989
SEMICONDUCTOR DEVICE DIODE SILICON POWER RECTIFIER, TYPES 1N1184, 1N1186, 1N1188, 1N1190, 1N3766, 1N3768, 1N184R, 1N1186R, 1N1188R, 1N1190R, 1N3766R, 1N3768R, JAN, JANTX, AND JANTXV
Includes all amendments and changes through Amendment 2, October 20, 1992
Additional Comments: CNCL S/S BY MIL-PRF-19500/297
This specification covers the detail requirements for silicon semiconductor power rectifier diodes. Three levels of product assurance are provided for each device as specified in MIL-S-19500.
See figure 1 (DO-5).
RθJC = .8°C/W maximum. Beneficial comments (recommendations, additions, de1etions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441-5700 by using the self-addressed Standardization Document Improvement Proposal(DD Form 1426) appearing at the end of this document or by letter.