MIL-S-19500/406 Revision C, May 16, 1994
SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR TYPES 1N4460 THROUGH 1N4496 AND 1N485 THROUGH 1N6491, 1N4460US THROUGH 1N4496US AND 1N6485US THROUGH 1N6491US JANTX, JANTXV, JANS, AND JANC
Includes all amendments and changes through Amendment 1, September 7, 1994
Additional Comments: CNCL S/S BY MIL-PRF-19500/406
This specification covers the detail requirements for microminiature 1.5 watt silicon, low leakage, voltage regulator diodes with tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are provided for each device type as specified in MIL-S-19500, and two level of product assurance for die.
See figures 1 (similar to DO-41), 2, and 3.
Maximum ratings are as shown in columns 8 and 10 of table III herein and as follows:
PT = 1.5 W (derate at 10 mW/°C above TA = +25°C) −55°C < Top < +175°C; −65°C < TSTG < +175°C
Primary electrical characteristics are as shown in columns 2, 9, 12, and 14 of table III herein and as follows:
3.3 V dc ≤ Vz ≤ 200 V dc
1N4460D through 1N4496D and 1N6485D through 1N6491D are 1 percent voltage tolerance.
1N4460C through 1N4496C and 1N6485C through 1N6491C are 2 percent voltage tolerance.
1N4460 through 1N4496 and 1N6485 through 1N6491 are 5 percent voltage tolerance.
RΘJL = 42°C/W (max) at L = .375 inch (9.52 mm) (nonsurface mount)
RΘJEC = 20°C/W (max) (surface mount)
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Electronics Supply Center, DESC-ELD, 1507 Wilmington Pike, Dayton, OH 45444-5765 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.