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MIL-S-19500/472 Revision A, January 20, 1983
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SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER TYPES 2N6350, 2N6351, 2N6352, AND 2N6353, JAN, JANTX, AND JANX
Includes all amendments and changes through Interim Notice 1, June 7, 1999
Additional Comments: INACTIVE FOR NEW DESIGN AFTER 6/7/99
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This specification covers the detail requirements for NPN, Darlington, silicon, power transistors for use in high-speed power-switching applications. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.

Types 2N6350 and 2N6351, see figure 1 (TO-33).

Types 2N6352 and 2N6353, see figure 3 (3 PIN TO-66).

TABLE Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: US Army Electronics Research and Development Command, ATTN: DELET-R-S, Fort Monmouth, NJ 07703, using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

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