MIL-S-19500/543 Revision D, June 30, 1992
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6764, 2N6766, 2N6768, 2N6770, JANTX, JANTXV, JANS, AND JANC
Includes all amendments and changes through Amendment 1, November 17, 1993
Additional Comments: CNCL S/S BY MIL-PRF-19500/543
This specification covers the detail requirements for N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-S-19500. See 6.4 for JAN level. See 6.5 for JANC ordering information.
See figure 1 (TO-204AE for types 2N6764 and 2N6766; TO-204AA for types 2N6768 and 2N6770 (formerly TO-3)), see figure 2 and figure 3 herein for JANC (die) dimensions.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: NASA/Parts Project Office (NPPO), NASA Goddard Space Center, Code 310.A, Greenbelt, MD 20771 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.