MIL-S-19500/551 Revision B, December 29, 1994
SEMICONDUCTOR DEVICE, DIODE SILICON TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468 AND 1N6461US THROUGH 1N6468US JANTX AND JANTXV
Includes all amendments and changes through Amendment 1, April 29, 1995
Additional Comments: RENUMBERED AS MIL-PRF-19500/551
This specification covers the detail requirements for 500-watt peak pulse, power, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-S-19500, and two levels of product assurance for each unencapsulated device type die device type as specified in MIL-S-19500.
See figures 1, 2, 3, 4, and 5.
Maximum ratings are as shown in columns 4, 6, and 7 of table III herein and as follows:
PR = 2.5 W (TA = room ambient as defined in the general requirements of 4.5 of MIL-STD-750) (derate at 16.7 mW/°C for nonsurface mount devices) (10 mW/°C for surface mount devices) (see figures 3, 4, and 5).
PPR = 500 W (see figure 7) at tp = 1 ms.
IFSM = 80 A(pk) at tp = 8.33 ms (TA = +25°C).
−55°C ≤ Top≤ +175°C; −55°C ≤ TSTG ≤ +175°C (ambient).
Primary electrical characteristic columns 2 and 4 of table III herein. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: NASA/Parts Project Office (NPPO) NASA Goddard Space Flight Center, Code 310.A Greenbelt, MD 20771 by using the Standardization Document improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.