MIL-S-19500/565 Revision A, October 7, 1987
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON,TYPES 2N6895, 2N6896, 2N6897 AND 2N6898 JANTX, JANTXV AND JANS
Includes all amendments and changes through Amendment 2, July 2, 1991
Additional Comments: CNCL S/S BY MIL-PRF-19500/565
This specification covers the detail requirements for a P-Channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.
See figures 1 and 2; TO-205AF for type 2N6895; TO-204AA for 2N6896 and 2N6897; and TO-204AE for 2N6898.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: US Army Laboratory Command, ATTN: SLCET-R-S,) Fort Monmouth, NJ 07703-5302, by using the self-addressed Standardization Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.