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MIL-S-19500/602 Revision A, January 21, 1994
Complete Document
Superseded By: MIL-PRF-19500/602
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7265, 2N7266, AND 2N7267 JANTXVM, D, R, H AND JANSM, D, R, H
Additional Comments: CNCL S/S BY MIL-PRF-19500/602
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This specification covers the detail requirements for an N-Channel, enhancement-mode, MOSFET, Radiation Hardened (total dose only), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-S-19500, with Avalanche Energy Maximum rating (EAS) and Maximum Avalanche Current (IAS).

See figure 1, TO-204AE (2N7265, 2N7266) and TO-204AA (2N7267).

TA = +25°C, unless otherwise specified. TABLE Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: NASA/Parts Project Office (NPPD), NASA Goddard Space Flight Center Code 310.A, Greenbelt, MD 20771 by using the Standardization Document improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. FIGURE 1.  Physical dimensions for TO-204AE (2N7265, 2N7266) and TO-204AA (2N7267).

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