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MIL-S-19500/604 92nd Edition, November 10, 1995
Complete Document
Superseded By: MIL-PRF-19500/604
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7272, 2N7275, 2N7278, AND 2N7281 JANTXVM, D, R, AND JANSM, D ANDR
Includes all amendments and changes through Amendment 1, March 24, 1997
Additional Comments: CNCL S/S BY MIL-PRF-19500/604
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This specification covers the detail requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose characterization only), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-S-19500.

See figure 1, TO-205AF.

TA = +25°C unless otherwise specified. TABLE Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: NASA/Parts Project Office (NPPO), NASA Goddard Space Flight Center, Code 310.A, Greenbelt, MD 20771 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

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