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MIL-S-19500/87 Revision A, May 31, 1966
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SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM LOW POWER TYPE 2N1142
Includes all amendments and changes through Validation Notice 3, July 13, 2011
Additional Comments: INACTIVE FOR NEW DESIGN
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This specification covers the detail requirements for a low-power, high-frequency, PNP, germanium transistor.

See figure 1 (modified TO-39).

See table I. TABLE I. Maximum ratings
PT1/        PT 2/     VCBO   VEBO     IC        Tstg       TJ
TA = 25° C   TC = 25° C
--------------------------------------------------------------------------------
    mW          mW         Vdc    Vdc    mAdc        °C        °C
                                                                                
    300         750        −30    −0.7    100   −65 to +100    +100

1/  Derate linearly at 4.0 mW/°C for TA > 25° C
2/  Derate linearly at 10.0 mW/°C TC> 25° C




See table II. TABLE II. Primary electrical characteristics
hFE              hfe            Cobo           VCE(sat)
         VCE = −10 Vdc    VCE = −10 Vdc    VCB = −10 Vdc   IC = −50 mAdc
Limits
         IC  = −10 mAdc   IC  = −10 mAdc   IE  = 0         IB = −10 mAdc
                           f  = 100 mc     f   = 1 mc
-------------------------------------------------------------------------------------

                              db               pf                Vdc

Min          10               10               ---               ---

Max         ---              ---                4                 −2