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MIL-S-19500/356

Revision D, June 19, 1992

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SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N4954 THROUGH 1N4996, 1N5968, 1N5969, AND 1N6632 THROUGH 1N6637, 1N4954US THROUGH 1N4996US, 1N5968US, 1N5969US, AND 1N6632US THROUGH 1N6637US, JANTX, JANTXV, JANS AND JANC



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Superseded By: MIL-PRF-19500/356

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CNCL S/S BY MIL-PRF-19500/356
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Description / Abstract:

This specification covers the detail requirements for silicon, voltage regulator diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500, and one level of product assurance for die.

See figures 1, 2, and 3.

Maximum ratings are as shown in columns 4, 8, and 10 of table VI herein, and as follows:

PT = 5 W at TL = 75°C, L = ⅜ inch (see figure 3 and 6.2), derate 50 mW/°C above TL = 75°C. 1/

PT = 2.25 W at TA = 25°C, derate 15 mW/°C above TA = 25°C.

−55°C < TOP < +175°C (ambient); −65°C < TSTG < +200°C (ambient).

Barometric pressure reduced (high altitude operation): 8 mm Hg.

Primary electrical characteristics are as shown in columns 2, 12, and 14 of table VI herein, and as follows:

RΘJL = 20°C/W (max) at L = ⅜ inch 1/

RΘJEC = 7°C/W (max) (surface mount)

3.3 V dc ≤ VZ ≤ 390 V dc