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MIL-S-19500/411

Revision G, February 1, 1994

Complete Document

SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY IN5415 THROUGH 1N5420, 1N5415US THROUGH IN5420US, JAN, JANTX, JANTXV, JANS, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR, AND JANSH



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Superseded By: MIL-PRF-19500/411

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CNCL S/S BY MIL-PRF-19500/411
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Description / Abstract:

This specification covers the detail requirements for silicon rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-S-19500. Provision for radiation hardness assurance (RHA) to four radiation test levels is provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", "R", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

See figures 1 and 2. (Similar to DO-41)

TABLE

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Director, US Army Research Laboratory, ELectronics and Power Sources Directorate, ATTN: AMSRL-EP-RD, Fort Monmouth, NJ 07703-5601 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. FIGURE 1. Physical dimensions. FIGURE 2. Physical dimensions of surface mount family.