1994083

SAE J1752/3_201709

Measurement of Radiated Emissions from Integrated Circuits—TEM/Wideband TEM (GTEM) Cell Method; TEM Cell (150 kHz to 1 GHz), Wideband TEM Cell (150 kHz to 8 GHz) (Stabilized: Sep 2017)

standard by SAE International , 09/22/2017

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Full Description

SAE J1752/3_201709 defines a method for measuring the electromagnetic radiation from an integrated circuit (IC). The IC being evaluated is mounted on an IC test printed circuit board (PCB) that is clamped to a mating port (referred to as a wall port) cut in the top or bottom of a TEM or wideband TEM (GTEM) cell. The test board is not in the cell as in the conventional usage but becomes a part of the cell wall.
 

Product Details

Published:
09/22/2017
Number of Pages:
16
File Size:
1 file , 3.3 MB
Note:
This product is unavailable in Ukraine, Russia, Belarus
 

Document History

  1. SAE J1752/3_201709

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    Measurement of Radiated Emissions from Integrated Circuits—TEM/Wideband TEM (GTEM) Cell Method; TEM Cell (150 kHz to 1 GHz), Wideband TEM Cell (150 kHz to 8 GHz) (Stabilized: Sep 2017)

    • Most Recent

  2. SAE J1752/3_201106


    Measurement of Radiated Emissions from Integrated Circuits—TEM/Wideband TEM (GTEM) Cell Method; TEM Cell (150 kHz to 1 GHz), Wideband TEM Cell (150 kHz to 8 GHz)

    • Historical Version

  3. SAE J1752/3_201106


    Measurement of Radiated Emissions from Integrated Circuits—TEM/Wideband TEM (GTEM) Cell Method; TEM Cell (150 kHz to 1 GHz), Wideband TEM Cell (150 kHz to 8 GHz)

    • Historical Version