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MIL-S-19500/556

Revision E, December 9, 1994

Base Document Only

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 216782, 2N6784, AND 2116786 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC



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Superseded By: MIL-PRF-19500/556

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Description / Abstract:

This specification covers the detail requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-S-19500. Two levels of product assurance are provided for each unencapsulated device type.

See figure 1, TO-205AF (formerly TO-39), and figures 3, 4, and 5 and 6.4 for JANHC and JANKC die dimensions.

Unless otherwise specified, TA = +25°C. TABLE Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: NASA/Parts Project office (NPPO), NASA Goddard Space Flight Center, Code 311.A, Greenbelt, MD 20771-3917, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. FIGURE 1.  Physical dimensions for TO-205AF. FIGURE 1.  Physical dimensions for TO-205AF - Continued. FIGURE 2.  Gauge for lead and tab locations. FIGURE 2.  Gauge for lead and tab location - Continued. FIGURE 3.  JANHCA and JANKCA die dimensions. FIGURE 4.  JANHCB and JANKCB die dimensions. FIGURE 5.  JANHCC and JANKCC die dimensions.

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