Hello. Sign In
Standards Store




MIL-S-19500/556

Revision D, January 11, 1994

Complete Document

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 216782, 2N6784, AND 2116786 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC



Detail Summary

Superseded By: MIL-PRF-19500/556

EN
Format
Details
Price (USD)
PDF
Single User
$37.00
Print
In Stock
$41.00
PDF + Print
In Stock
$54.60 You save 30%
Add to Cart

Product Details:


Description / Abstract:

This specification covers the detail requirements for an N-Channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-S-19500. Two levels of product assurance are provided for each unencapsulated device type.

See figure 1, TO-205AF (formerly TO-39), and figure 3 and 6.4 for JANHC and JANKC die dimensions.

Unless otherwise specified, TA = +25°C. TABLE Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: NASA/Parts project Office (NPPO), NASA Goddard Space Flight Center, Code 311.A, Greenbelt, MD 20771-3917, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. FIGURE 1.  Physical dimensions for TO-205AF. FIGURE 1.  Physical dimensions for TO-205AF - Continued. FIGURE 2.  Gauge for lead and tab locations. FIGURE 2. Gauge for lead and tab location - Continued. FIGURE 3.  JANHCA and JANKCA die dimensions.

TABLE